Device Features Maximum On-Resistance of 0.58 mΩ at 10 V and Low Gate Charge of 61 nC in Compact PowerPAK^® SO-8 Single Package

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 25 V n-channel TrenchFET^® Gen IV power MOSFET that features the industry’s lowest maximum on-resistance for such a device: 0.58 mΩ at 10 V. Delivering increased efficiency and power density for a wide range of applications, the Vishay Siliconix SiRA20DP offers the lowest gate charge and gate charge times on-resistance figure of merit (FOM) for devices with on-resistance below 0.6 mΩ.

Offered in the 6 mm by 5 mm PowerPAK^® SO-8 package, the device released today is one of the only two 25 V MOSFETs in the world with maximum on-resistance below 0.6 mΩ. In comparison, the SiRA20DP offers lower typical gate charge of 61 nC and a 32 % lower FOM of 0.035 Ω*nC. All other 25 V n-channel MOSFETs feature on-resistance that is 11 % higher or more.

The SiRA20DP’s low on-resistance minimizes conduction power losses to improve system efficiency and enable higher power density, which is ideal for OR-ring functions in redundant power architectures. The device’s low FOM enhances switching performance for DC/DC conversion in telecom and server power supplies, battery switching in battery systems, and load switching for 5 V to 12 V input rails.

The MOSFET is 100 % R_G– and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiRA20DP are available now, with lead times of 15 weeks for large orders.