New device offers 60% smaller packaging, enhanced performance and reduced losses

onsemi (Nasdaq: ON), a leader in intelligent power and sensing technologies today announced the world’s first TO-Leadless (TOLL) packaged sillicon carbide (SiC) MOSFET at PCIM Europe. The transistor addresses the rapidly growing need for high-performance switching devices that are suitable for designs with high levels of power density. Until recently, SiC devices had been supplied in D2PAK 7-lead packages which required significantly more space.

With a footprint of just 9.90 mm x 11.68 mm, the TOLL package offers 30% savings in PCB area over a D2PAK package. And at a profile of just 2.30 mm, it occupies 60% less volume than a D2PAK package.

In addition to its smaller size, the TOLL package offers better thermal performance and lower package inductance (2 nH) than a D2PAK 7-lead. Its Kelvin source configuration ensures lower gate noise and lower switching losses – including a 60% reduction in turn-on loss (EON) when compared to a device without a Kelvin configuration, ensuring significant improvements in efficiency and power density in challenging power designs as well as improved EMI and easier PCB design.

“The ability to deliver highly reliable power designs in a small space is becoming a competitive advantage in many areas, including industrial, high performance power supplies and server applications,” said Asif Jakwani, senior vice president and general manager, Advanced Power Division, onsemi. “Packaging our best-in-class SiC MOSFETs in the TOLL package not only reduces space but enhances performance in many areas such as EMI and reduces losses. The result is a highly reliable and rugged high-performance switching device that will help power designers meet their stringent power design challenges.”

SiC devices offer significant advantages over their silicon predecessors, including enhanced efficiency at high frequencies, lower EMI, higher temperature operation and greater reliability. onsemi is the only supplier of silicon carbide solutions with vertical integration capability including SiC boule growth, substrate, epitaxy, device fabrication, best-in-class integrated modules and discrete package solutions.

The first SiC MOSFET to be offered in the TOLL package is the NTBL045N065SC1 which is intended for demanding applications including switch-mode power supplies (SMPS), server and telecommunication power supplies, solar inverters, uninterruptible power supplies (UPS) and energy storage. The device is suitable for designs that are required to meet the most challenging efficiency standards including ErP and 80 PLUS Titanium.

The NTBL045N065SC1 has a VDSS rating of 650 V with a typical RDS(on) of just 33 mΩ and a maximum drain current (ID) of 73 A. Based upon wide bandgap (WBG) SiC technology, the device has a maximum operating temperature of 175°C and ultra-low gate charge (QG(tot) = 105 nC) that significantly reduces switching losses. Additionally, the TOLL package is MSL 1 (moisture sensitivity level 1) rated – and guaranteed – to ensure that failure rates in mass production are reduced.

In addition, onsemi offers automotive grade devices with TO-247 3 lead, 4 leads and D2PAK 7 leads packages.