AEC-Q101 qualified bare die and discrete packaged devices are WLBI screened and tested to avalanche breakdown voltage over 2200V; power and half-bridge modules available to simplify system design
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a family of 1700V SiC MOSFETs designed to meet the needs of medium-voltage high power conversion applications, such as photovoltaic and wind inverters, energy storage, EV and road-side charging, uninterruptable power supplies, and induction heating/welding.
The high-speed QSiC™ 1700V switching planar D-MOSFETs enable more compact system designs at large scale, with higher power densities and lower system costs. They feature a reliable body diode, capable of operation at up to 175oC, with all components tested to beyond 1900V, and UIL avalanche tested to 600mJ.
The QSiC 1700V devices are available in both a bare die form (GP2T030A170X), and as a 4-pin TO-247-4L-packaged discrete (GP2T030A170H) with drain, source, driver source and gate pins. Both are also available in an AEC-Q101 automotive qualified version (AS2T030A170X and AS2T030A170H).
The MOSFETs deliver low switching and conduction losses, low capacitance and feature a rugged gate oxide for long-term reliability, with 100 percent of components undergoing wafer-level burn in (WLBI) to screen out potentially weak oxide devices.
SemiQ has also announced a series of three modules as part of the family to simplify system design, this includes a standard-footprint 62mm half-bridge module housed in an S3 package with an AIN insolated baseplate, as well as two SOT-227 packaged power modules.
Specifications
The QSiC 1700V series’ bare die MOSFET comes with an aluminum (Al) top side and nickel/silver (Ni/Ag) bottom side. Both it and the TO-247-4L packaged device have a power dissipation of 564W, with a continuous drain current of 83A (at 25oC, 61A at 100oC) and a pulsed drain current of 250A (at 25oC). They also feature a gate threshold voltage of 2.7V (at 25oC, 2.1V at 125oC), an RDSON of 31mΩ (at 25oC, 57mΩ at 125oC), a low (10nA) gate source leakage current and a fast reverse recovery time (tRR) of 17ns. The TO-247-4L package has a junction to case thermal resistance of 0.27oC per watt.
The two 4-pin power modules are housed in a 38.0 x 24.8 x 11.7mm SOT-227 design and deliver an increased power dissipation of 652W with an increased continuous drain current of 123A (at 25oC – GCMX015A170S1E1) and 88A (at 25oC GCMX030A170S1-E1). In addition to low switching losses, both modules have a low junction-to-case thermal resistance of 0.19oC and 0.36oC per watt and feature an easy-mount design for direct mounting of the isolated package to a heatsink.
The half-bridge module is housed in a 61.4 x 106.4 x 30.9mm 9-pin S3 package and delivers a power dissipation of 2113W with a continuous drain current of 397Aand a pulsed drain current of 700A. In addition to low switching losses, the GCMX005A170S3B1-N module has a junction to case thermal resistance of 0.06oC per watt.
Please visit SemiQ.com for specifications and to request samples or volume pricing.
Download the datasheets for 1700V MOSFETs and modules here or via the product page here.
