Tested to over 1350W, modules integrate two low-loss high-speed switching SiC MOSFETs with reliable body diode and deliver up to 333W with continuous drain of up to 102A
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a family of three 1200V SiC full-bridge modules, each integrating two of the company’s rugged high-speed switching SiC MOSFETs with reliable body diode.
The modules have been developed to simplify the development of photovoltaic inverters, energy storage, battery charging and other high-frequency DC applications.
Available in 18, 38 and 77mΩ (RDSon) variants, the modules have been tested at voltages exceeding 1350V and deliver a continuous drain current of up to 102A, a pulsed drain current of up to 250A and a power dissipation of up to 333W.
Operational with a junction temperature of up to 175oC, the rugged B2 modules have exceptionally low switching losses (EON 0.13mJ, EOFF 0.04mJ at 25oC – 77mΩ module), low zero-gate voltage drain/gate source leakage (0.1µA/1nA – all modules) and low junction to case thermal resistance (0.4oC per watt – 18mΩ module).
“By integrating high-speed SiC MOSFETs with exceptional performance and reliability, our new QSiC 1200V family of full-bridge modules sets a new standard for power density and efficiency in demanding DC applications. This family of modules simplifies system design, and enables faster time-to-market for next-generation solar, storage, and charging solutions,” said Seok Joo Jang, Director of Module Engineering at SemiQ.
Available immediately, the modules can be mounted directly to a heat sink, are housed in a 62.8 x 33.8 x 15.0mm package (including mounting plates) with press fit terminal connections and split DC negative terminals.
Please visit SemiQ.com for specifications and to request samples or volume pricing.
Download the datasheets for GCMX020A120B2H2P(18mΩ, 102A), GCMX040A120B2H2P(38mΩ, 56A) and GCMX080A120B2H2P (77mΩ, 27A) 1200Vfull-bridge modules here.
