Super-high 30 kW/l power density; simple paralleling

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, and IFP Energies nouvelles (IFPEN), a major French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650V GaN ICs in a multi-level, 800VDC inverter. The demo delivers super-high power density–30kW/l – which is greater than can be achieved by more expensive, state-of-the-art silicon-carbide (SiC)-based devices.The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25mΩ / 650V ICeGaNICs – 36 devices in total – in parallel.

ANDREA BRICCONI| CHIEF MARKETING OFFICER, CGD

“We are super excited at this first result of our partnership with IFPEN. 800 VDC supports the 800 V bus which is being increasingly adopted by the EV industry. By addressing automotive and other high voltage inverter applications with energy-efficient ICeGaN-based solutions we are delivering on CGD’s key commitment– sustainability.”

This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800Vdc; 3-phase output; a peak current of 125 Arms (10s) (180Apk); and a continuous current of 85 Arms continuous (120Apk).

The ICeGaN multi-level design proposed by IFPEN reveals several compelling benefits:

• Increased Efficiency: the improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. It also leads to a reduction in battery cost if the initial range (iso-range)is maintained;
• Higher switching frequencies: GaN transistors can operate at much higher frequencies than silicon transistors. This reduces iron losses in the motor, particularly in the case of machines with low inductances;
• Reduced Electromagnetic Interferences: 3-level topology minimizes EMI and enhances the reliability of the system;
• Enhanced thermal management: insulated metallized substrate boards featuring an aluminium core facilitate superior thermal dissipation, ensuring optimal operating temperatures and extending the lifespan of the system and associated GaN devices;
• Modular design: this facilitates scalability and adaptability for varying system requirements.