World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 VSiCMOSFETs to support up to 3x more powerful AI data centers and faster charging EVs
Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announces their new portfolio of Gen-3 ‘Fast’ (G3F) 650V and 1,200V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI datacenter power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar/energy-storage systems (ESS). The broad portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.
The G3F family is optimized for high-speed switching performance, resulting in 40% improvement to hard-switching figures-of-merits (FOMs) compared to competition in CCM TPPFC systems. This will enable increasing the wattage of next-generation AIpower supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.
The G3F GeneSiC MOSFETsare developed usinga proprietary ‘trench-assisted planar’ technology. and offer better-than-trench MOSFET performance, while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enablingup to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON)increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON)under real-life operation at high temperatures compared to competition.
Additionally, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.
Navitas’ latest 4.5kW high-power density AI Server PSUreference design in CRPS185 form-factor,showcasesthe650 V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe™ Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97% is realized, which comfortably achieves ‘Titanium Plus’ efficiency standards,now mandatory in Europe.
For the EV market, 1,200 V/34 mOhm(G3F34MT12K) G3F FETs enable Navitas’ new22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5%.
“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” notedDr. Sid Sundaresan, Senior Vice President of SiCTechnology and Operations. “We’re pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”
Parts are available now to qualified customers. Please contact sicsales@navitassemi.comfor moreinformation.
